• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    In the present application, an electroluminescence structure is described which comprises, among other things, a first electrode layer (2) prepared by means of the thin film technique, and a second electrode layer (7, 7') prepared by means of a thick film technique, as well as a luminescence layer (4) disposed between the electrode layers. The use of a thick film directly as the electrode of a thin film structure causes problems resulting from inhomogeneous contact of the thick film material. According to the invention, these problems have been solved so that between the second electrode layer (7, 7') and the luminescence layer (4), a very thin additional layer (6) of resistive material is disposed which is bounded by the second electrode layer (7, 7') and which forms a spreading resistance for the point contacts of the conductive particles in the second electrode layer (7, 7'). In this resistance the inhomogeneous current density is homogenized before reaching the luminescence layer (4).
    公开号:SU1327810A3
    申请号:SU823427349
    申请日:1982-04-21
    公开日:1987-07-30
    发明作者:Гуннар Линдфорс Свен
    申请人:Ой Лохья Аб (Фирма)；
    IPC主号:
    专利说明:

    113
    The invention relates to electroluminescent light sources and can be used in visual indication devices;
    The aim of the invention is to improve processability while maintaining luminance uniformity when making the second electrode layer consisting of at least two insulating parts from one another.
    The drawing shows an electroluminescent structure, a cross section.
    The structure contains a substrate 1, for example, of glass with the first electrode layer 2 of indium tin oxide deposited on it (, 02) in the form of a film 40-50 nm thick, in the structure intended for operation on alternating current on the surface The first electrode layer 2 contains an additional layer 3, which is an Al20 insulator film with a thickness of 200-250 nm. On the additional layer 3 there is a luminescent layer 4 on the basis of ZnSrMn in the form of a film, the thickness of which is approximately equal to 300 nm. Over the luminescent layer
    4 there is a second additional layer 5, similar to layer 3, on the layer
    5 is a layer of resistive material 6 with a thickness of 5-100 nm. Layer 6 can be made in the form of a film of TiOj, InjOj, SnOj, indium oxide oxide (Inj (Sn ,, Oj) or carbon film. On the surface of the layer of resistive material 6 there are electrodes 7 and 8 of the second electrode layer, consisting from a bonding material and electrically conductive particles and having a thickness of 40-50 microns,
    In the structure intended for operation on direct current, the additional layer 3 is made in the form of a TiO film with a thickness of about 10 Ohm, and the second additional layer 5 is made of titanium-tantalum oxide with a film thickness of 200–500 nm.
    All solid layers (2-6) were fabricated by atomic layer epitaxy technology,.
    The shape and location of the displayed characters is determined by the shape and location of parts 7 and 8 of the second electrode layer, produced using the technology of thick films of paste containing graphite particles.
    o2
    The fabrication of a layer of resistive material 6 in continuous improves the manufacturability of the electromine-memory structure, so there is no laborious stage lithography. The choice of the maximum thickness of layer 6 equal to 100 is caused by the need to eliminate currents between parts 7 and 8 of the second electrode layer, the distance between which can be 50-100 microns. The minimum thickness of layer 6 (5) is chosen from the condition of obtaining sufficient resistance between the point contacts of the second electrode layer and the corresponding sections of luminescent layer 4 to equalize the current density through these areas, which ensures the uniformity of their luminescence.
    The resistance of layer 6 also limits the current in the case of an electroluminescent center DC structure.
    权利要求:
    Claims (4)
    [1]
    1. An electroluminescent structure comprising a substrate, a first electrode layer, a second electrode layer deposited on a substrate, located at a distance from the first electrode layer and consisting of a binder and conductive particles, a luminescent layer located between the first and second electrode layers, at least one additional layer for current limiting and / or chemical. protection layer, located between the electrode and luminescent layers, a layer of resistive material, located between the luminescent and second electrode ayu in direct contact with the latter, so that, with the aim of improving processability with maintaining uniform luminescence when making the second electrode layer consisting of at least two parts isolated from one another, an additional layer of resistive material is made solid with a thickness lying in the range of 5-100nm and is in contact e with said h ast said second electrode layer,
    [2]
    2. The electroluminescent structure of claim 1, wherein the layer of resistive material is made of TiOj. 1p2.0 :, or SnO,
    31327810.
    [3]
    3. Electroluminescent structure,
    [4]
    4. The electroluminescent structure according to claim 1, characterized in that - Clause 1, characterized in that the resistive material layer is in that. The resistive man-made layer of indium oxide oxide g of the material is made of a carbon film.
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    同族专利:
    公开号 | 公开日
    FI62448C|1982-12-10|
    DE3213887A1|1982-11-18|
    GB2097187A|1982-10-27|
    FI62448B|1982-08-31|
    GB2097187B|1985-02-13|
    FR2504769B1|1986-02-21|
    JPS57194485A|1982-11-30|
    DD202365A5|1983-09-07|
    FR2504769A1|1982-10-29|
    US4418118A|1983-11-29|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US2824992A|1955-01-17|1958-02-25|Sylvania Electric Prod|Electroluminescent lamp|
    GB828720A|1956-08-20|1960-02-24|Thorn Electrical Ind Ltd|Improvements in and relating to the manufacture of translucent electrically-conducting layers|
    US3268755A|1961-03-30|1966-08-23|Optische Ind De Oude Delft Nv|Current-electroluminescence device having a high resistance layer|
    US3315111A|1966-06-09|1967-04-18|Gen Electric|Flexible electroluminescent device and light transmissive electrically conductive electrode material therefor|
    US3686139A|1970-03-10|1972-08-22|Globe Union Inc|Resistive coating compositions and resistor elements produced therefrom|
    JPS5272197A|1976-04-05|1977-06-16|Sharp Corp|Thin film el device|
    GB1571620A|1976-10-29|1980-07-16|Secr Defence|Electroluminescent phosphor panels|JPS6240837B2|1981-10-22|1987-08-31|Sharp Kk|
    FI64878C|1982-05-10|1984-01-10|Lohja Ab Oy|KOMBINATIONSFILM FOER ISYNNERHET TUNNFILMELEKTROLUMINENSSTRUKTURER|
    JPS6340038B2|1983-04-28|1988-08-09|Alps Electric Co Ltd|
    JPH0247078B2|1983-06-04|1990-10-18|Alps Electric Co Ltd|
    JPH0579507B2|1983-06-14|1993-11-02|Kyocera Corp|
    JPS6260800B2|1983-09-30|1987-12-17|Matsushita Electric Ind Co Ltd|
    EP0141116B1|1983-10-25|1989-02-01|Sharp Kabushiki Kaisha|Thin film light emitting element|
    JPH0530039B2|1983-12-09|1993-05-07|Matsushita Electric Ind Co Ltd|
    JPH0119758B2|1984-04-10|1989-04-12|Takashi Hirate|
    US4963441A|1984-05-24|1990-10-16|Shiga Prefecture|Light-storing glazes and light-storing fluorescent ceramic articles|
    US4603280A|1984-10-30|1986-07-29|Rca Corporation|Electroluminescent device excited by tunnelling electrons|
    US4757235A|1985-04-30|1988-07-12|Nec Corporation|Electroluminescent device with monolithic substrate|
    JPS61284091A|1985-06-07|1986-12-15|Alps Electric Co Ltd|Thin film el display element|
    JPH0230155B2|1985-06-07|1990-07-04|Alps Electric Co Ltd|
    US4748375A|1985-12-27|1988-05-31|Quantex Corporation|Stable optically transmissive conductors, including electrodes for electroluminescent devices, and methods for making|
    US4794302A|1986-01-08|1988-12-27|Kabushiki Kaisha Komatsu Seisakusho|Thin film el device and method of manufacturing the same|
    US4703803A|1986-06-24|1987-11-03|Cities Service Oil & Gas Corporation|Composition and method for slowly dissolving siliceous material|
    US4849674A|1987-03-12|1989-07-18|The Cherry Corporation|Electroluminescent display with interlayer for improved forming|
    US5229628A|1989-08-02|1993-07-20|Nippon Sheet Glass Co., Ltd.|Electroluminescent device having sub-interlayers for high luminous efficiency with device life|
    US5480818A|1992-02-10|1996-01-02|Fujitsu Limited|Method for forming a film and method for manufacturing a thin film transistor|
    US5432015A|1992-05-08|1995-07-11|Westaim Technologies, Inc.|Electroluminescent laminate with thick film dielectric|
    JP3181737B2|1992-12-28|2001-07-03|東北パイオニア株式会社|Electroluminescence element|
    KR100279591B1|1993-12-14|2001-02-01|구자홍|Electroluminescent Device Manufacturing Method|
    US5796120A|1995-12-28|1998-08-18|Georgia Tech Research Corporation|Tunnel thin film electroluminescent device|
    US5750188A|1996-08-29|1998-05-12|Motorola, Inc.|Method for forming a thin film of a non-stoichiometric metal oxide|
    US6771019B1|1999-05-14|2004-08-03|Ifire Technology, Inc.|Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties|
    TW556357B|1999-06-28|2003-10-01|Semiconductor Energy Lab|Method of manufacturing an electro-optical device|
    TWI229827B|2003-02-10|2005-03-21|Kwang-Hyun Hwang|Decorative illuminating apparatus|
    US7586247B2|2005-04-18|2009-09-08|Jiahn-Chang Wu|Ballast for light emitting device|
    JPWO2007032175A1|2005-09-12|2009-03-19|出光興産株式会社|Conductive laminate and organic EL device|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    FI811244A|FI62448C|1981-04-22|1981-04-22|ELEKTROLUMINENSSTRUKTUR|
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